{"id":234132,"date":"2024-10-19T15:16:15","date_gmt":"2024-10-19T15:16:15","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iec-63068-32020\/"},"modified":"2024-10-25T09:47:58","modified_gmt":"2024-10-25T09:47:58","slug":"bs-iec-63068-32020","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iec-63068-32020\/","title":{"rendered":"BS IEC 63068-3:2020"},"content":{"rendered":"
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.<\/p>\n
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2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
4<\/td>\n | English CONTENTS <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 4 Photoluminescence method 4.1 General 4.2 Principle 4.3 Requirements 4.3.1 Measuring equipment <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | Figures Figure 1 \u2013 Schematic diagram of PL imaging system <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | 4.3.2 Wafer positioning and focusing 4.3.3 Image capturing 4.3.4 Image processing 4.3.5 Image analysis <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | 4.3.6 Image evaluation 4.3.7 Documentation 4.4 Parameter settings 4.4.1 General 4.4.2 Parameter setting process 4.5 Procedure 4.6 Evaluation 4.6.1 General 4.6.2 Mean width of planar and volume defects <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 4.6.3 Evaluation process 4.7 Precision 4.8 Test report 4.8.1 Mandatory elements 4.8.2 Optional elements <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | Annex A (informative)Photoluminescence images of defects A.1 General A.2 BPD <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | A.3 Stacking fault Figure A.1 \u2013 BPD <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | A.4 Propagated stacking fault Figure A.2 \u2013 Stacking fault Figure A.3 \u2013 Propagated stacking fault <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | A.5 Stacking fault complex A.6 Polytype inclusion Figure A.4 \u2013 Stacking fault complex <\/td>\n<\/tr>\n | ||||||
22<\/td>\n | Figure A.5 \u2013 Polytype inclusion <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | Annex B (informative)Photoluminescence spectra of defects B.1 General B.2 BPD B.3 Stacking fault Figure B.1 \u2013 PL spectrum from BPD <\/td>\n<\/tr>\n | ||||||
24<\/td>\n | Figure B.2 \u2013 PL spectra from Frank-type stacking faults Figure B.3 \u2013 PL spectra from Shockley-type stacking faults <\/td>\n<\/tr>\n | ||||||
25<\/td>\n | B.4 Propagated stacking fault B.5 Stacking fault complex Figure B.4 \u2013 PL spectra from various stacking faultsin the wavelength range longer than 650 nm <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | B.6 Polytype inclusion Figure B.5 \u2013 PL spectrum from stacking fault complex Figure B.6 \u2013 PL spectrum from polytype inclusion <\/td>\n<\/tr>\n | ||||||
27<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Test method for defects using photoluminescence<\/b><\/p>\n |